氮化鎵磊晶片
氮化鎵磊晶片
Next Generation GaN Power
and RF Semiconductors
- GaN promise to be next generation wide bandgap semiconductor for power and RF application.
- GaN HEMT on Si has high breakdown voltage, high saturation electron velocity, lower Ron, faster switching speed and lower cost.
- GWC provide various substrate thickness and resistance spec. upon request
- GWC provide GaN HEMT Epi OEM services
Layer # | Material | Note |
6 | GaN Cap | Thickness and Material upon request |
5 | Barrier AlxGa1-xN | Thickness and Al% upon request |
5 | AlN spacer | Thickness upon request |
4 | GaN Channel | Thickness upon request |
2 | HR GaN | |
1 | Buffer | |
Substrate | 6” Si (111) | Flat length: 57.5 ± 2.5 mm |