氮化鎵磊晶片

Next Generation GaN Power 

and RF Semiconductors

• GaN promise to be next generation wide bandgap semiconductor for power  and RF application. 
• GaN HEMT on Si has  high breakdown voltage, high saturation electron velocity, lower Ron, faster switching speed and lower cost.
• GWC provide various substrate thickness and resistance spec. upon request
• GWC provide GaN HEMT Epi OEM services