Sino-American Silicon Products Inc.(SAS), Sino Sapphire Co., Ltd. (SSC) and Crystalwise Technology Inc. (CWT) collaborate to present “Critical Technology and Material of High-Power White-light LED” at National Chiao Tung University(NCTU) on September 27. The presentation proudly invites Professor Hao-Chung Kuo of NCTU and Professor Je-Liang Yeh of National Tsing-Hua University (NTHU) to introduce LED trend ad Nano-structured applied on PSS.

 

SSC presents large-size single-crystal CZ pulling technology and large size PSS with high uniformity. Most manufacturers adapt KY pulling with A-axial crystal growth while applicable axis is C, resulting in overall utilization ratio dropping to 30%. SSC’ unique CZ pulling is able to produce C-axial crystal directly, elevating utilization ratio to 70%. Besides, special design of heating and hot zone reduces much electricity consumption.

 

SSC also devotes in precision process and Nano-structured technology on PSS. SSC is one of the few LED manufactures in the world that possesses KY, CZ, WPSS and DPSS technologies along with numerous international patterns, being able to pursuit epi quality and LED brightness with clients. SSC’ leading innovation of 6″ WPSS and 6″ DPSS announce it’s ready for next generation LED specification to the world. R&D center carefully deploys from present products to innovative future; patents increase by three times within short time. Strong R&D is the greatest advantage.

 

CWT applies core technology to sapphire carrier wafer of GaAs Power Amplifier. Though the biggest GaAs wafer foundry locates in Taiwan, it’s hard to produce the key ingredient, carrier wafer, owing to its high precision, causing inseparable dependent on Japan and US importation. CWT restlessly explores carrier wafer and is certified by GaAs wafer foundry, providing high quality Carrier Wafer.

 

Professor Kuo of NCTU kindly shares the crucial knowledge of PSS pattern design. Sophisticated manipulation of pattern and interval escalates 33% of brightness compared to traditional plain substrate. Low-cost nano-structured applied on PSS developed by Professor Yeh of NTHU not only increase 20% of brightness, but also reduces epitaxial defects by 100 times as well as 30% of production cost.

 

The presentation shows that SSC and CWT are ready for large-size LED in the future. The merger will synthesize technology, talents, market and capacity and will build a barrier that other competitors are hard to overcome in order to provide better products and service,.

 

Also, SAS’Aegis® Wafer is honored Silicon Innovation Award of Solar Industry Awards, one of the most representative awards in solar industry. Aegis® Wafer, integrated SAS’ advanced Nano-texturing and Low-defect crystal growth technologies, saves huge power consumption with its revolutionary technology, elevates wafer intensity and value. Its ultra conversion efficiency, which tops 18% while the average performance in the market ranges 17%, not only outshines other rivals, but also sets up ideal for clean energy. Most important of all, it wins jury’s recognition by being bestowed Silicon Innovation Award.