Pseudo Square Mono Crystalline Wafer

Pseudo Square Mono Crystalline Wafer

Pseudo Square Mono Wafers provide ideal solution to the increasing demands for high-end PV applications. With over 25 years of semiconductor experience, each piece of our mono wafer features superior silicon properties and performs astonishing results.

Pseudo Square Mono Crystalline Wafer

 M2Unit
Diameter210±0.25
Square Length156.75±0.25mm
Angle Length8.5±0.5mm
Ingot Growing MethodCZ
Dopant TypeBoron
ConductivityP
Orientation‹100›±3°
Resistivity0.5-1.5Ohm.cm
Thickness180+20/-10
175+20/-10
170+20/-10
um
 G1Unit
Diameter223±0.25
Square Length158.75±0.25mm
Angle Length1.07±0.5mm
Ingot Growing MethodCZ
Dopant TypeBoron
ConductivityP
Orientation‹100›±3°
Resistivity0.5-1.5Ohm.cm
Thickness180+20/-10
175+20/-10
170+20/-10
um
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